AO4918 transistor equivalent, dual n-channel enhancement mode field effect transistor.
Q1
Q2
VDS (V) = 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V RDS(ON) < 14.5mΩ <18mΩ (VGS = 10V) <27mΩ (VGS = 4.5V) RDS(ON) < 16mΩ SCHOTTKY VDS (V) = 30V, I.
OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY .
The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in pa.
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